GNP2070TD-Z (新产品)
EcoGaN™, 650V 27A TOLL-8N, E-mode Gallium-Nitride(GaN) HEMT
GNP2070TD-Z (新产品)
EcoGaN™, 650V 27A TOLL-8N, E-mode Gallium-Nitride(GaN) HEMT
GNP2070TD-Z is an 650V GaN HEMT which has achieved the industry's highest class FOM (Ron*Ciss、Ron*Coss). It is a product of the EcoGaN™ series that contributes to power conversion efficiency and size reduction by making the best use of low ON resistance and high-speed switching. ESD protection function is built in for high-reliability design. In addition, the highly versatile packages provide excellent heat dissipation and facilitates mounting. Looking for the Gate Driver inspiring GaN HEMT performance? → Gate Drivers for GaN
主要规格
特性：
VDS [V]
650
IDS [A]
27
VGS Rating [V]
6.5
RDS(on) [mΩ]
70
Qg [nC]
5.2
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Dimensions [mm]
9.9x11.68 (t=2.4)
特点：
- 650V E-mode GaN HEMT
- 70mΩ Resistance
- 5.2nC Gate Charge
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