QS5U17
2.5V Drive Nch+SBD MOSFET
QS5U17
2.5V Drive Nch+SBD MOSFET
电界效果晶体管MOSFET。通过融合采用细微流程的低阻值MOSFET与肖特基二极管（SBD）形成了多种产品线来对应多样的市场需求。
主要规格
特性：
Package Code
SOT-25T
Number of terminal
5
Polarity
Nch+Schottky
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
2
RDS(on)[Ω] VGS=2.5V(Typ)
0.11
RDS(on)[Ω] VGS=4V(Typ)
0.076
RDS(on)[Ω] VGS=4.5V(Typ)
0.071
RDS(on)[Ω] VGS=Drive (Typ)
0.11
Total gate charge Qg[nC]
2.8
Power Dissipation (PD)[W]
0.9
Drive Voltage[V]
2.5
Reverse voltage VR (Diode) [V]
20
Forward Current IF (Diode) [A]
1
Forward Current Surge Peak IFSM (Diode) [A]
3
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
2.9x2.8 (t=0.95)
