SCT2080KE
SiC（碳化硅）MOSFET
SCT2080KE
SCT2080KE
SiC（碳化硅）MOSFET
基于SiC的平面型MOSFET。（SiC-SBD非一体型） 其特征是高耐压、低导通电阻、高速开关。
主要规格
特性：
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
80
Generation
2nd Gen (Planar)
Drain Current[A]
40
Total Power Dissipation[W]
262
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
特点：
・High-speed switching・Low ON resistance
・Low body diode Qrr and trr
・Ensured reliability of body diode conduction
