SCT2080KEHR
N-channel SiC（碳化硅）功率MOSFET
SCT2080KEHR
N-channel SiC（碳化硅）功率MOSFET
基于SiC的平面型MOSFET。 其特征是高耐压、低导通电阻、高速开关。
主要规格
特性：
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
80
Generation
2nd Gen (Planar)
Drain Current[A]
40
Total Power Dissipation[W]
262
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
Common Standard
AEC-Q101 (Automotive Grade)
特点：
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
- Qualified to AEC-Q101
