SCT2H12NZ
SiC（碳化硅）MOSFET
SCT2H12NZ
SiC（碳化硅）MOSFET
Auxiliary power supplies used in high voltage, high power industrial equipment typically utilize high voltage (>1000V) silicon MOSFETs. But by replacing these with high efficiency SiC MOSFETs heat generation can be significantly reduced, eliminating the need for external parts such as heat sinks. ROHM has recently expanded its considerable lineup by offering 1700V class SiC MOSFETs along with an evaluation board that facilitates performance verification and application development.
We offer an evaluation board (BD7682FJ-LB-EVK-402) equipped with the DC-DC converter control IC "BD7682FJ-LB," which maximizes the performance of SiC power MOSFETs.
主要规格
特性：
Drain-source Voltage[V]
1700
Drain-source On-state Resistance(Typ.)[mΩ]
1150
Generation
2nd Gen (Planar)
Drain Current[A]
3.7
Total Power Dissipation[W]
35
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
21.0x16.0 (t=5.2)
特点：
- Low on-resistance
- Fast switching speed
- Long creepage distance
- Simple to drive
- Pb-free lead plating; RoHS compliant
参考设计 / 应用评估套件
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- Evaluation Board - BD7682FJ-LB-EVK-402
Isolation Fly-back Converter Quasi-Resonant Method Output 24 W 24 V
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- Evaluation Board - BD7682FJ-LB-EVK-302
The BD7682FJ is an AC/DC quasi-resonant flyback controller IC from ROHM Semiconductor and offers an Auxiliary Power Supply Solution if combined with the 1700 V SiC MOSFET (SCT2H12NZ). The BD7682FJ and SCT2H12NZ combined together have been used to develop an isolated 100 W 24 V output auxiliary power solution with a very accurate voltage regulation.
