SCT3080KR
1200V Nch 4引脚封装 SiC（碳化硅）MOSFET
SCT3080KR
1200V Nch 4引脚封装 SiC（碳化硅）MOSFET
SCT3080KR是非常适用于要求高效率的服务器用电源、太阳能逆变器及电动汽车充电站等的沟槽栅结构SiC MOSFET。采用电源源极引脚和驱动器源极引脚分离的4引脚封装，能够充分地发挥出高速开关性能。尤其是可以显著改善导通损耗。与以往的3引脚封装（TO-247N）相比，导通损耗和关断损耗合起来预计可降低约35％的损耗。
主要规格
特性：
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
80
Generation
3rd Gen (Trench)
Drain Current[A]
31
Total Power Dissipation[W]
165
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x23.45 (t=5.2)
特点：
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
Reference Design / Application Evaluation Kit
-
- Evaluation Board - P02SCT3040KR-EVK-001
- For evaluating ROHM’s SCT3040KR (1200V/40mΩ/TO-247-4L)
Enables evaluation of other ROHM SiC MOSFETs by simply changing the circuit multiplier - In addition to the TO-247-4L package, there are through-holes for TO-247-3L that make it possible to perform comparative evaluations on the same board
- Single power supply (+12V operation)
- Supports double pulse testing up to 150A and switching up to 500kHz
- Compatible with a variety of power supply topologies (Buck/Boost/Half Bridge)
- Built-in isolated power supply for gate drive adjustable via variable resistor (+12V to +23V)
- Jumper pins enable switching between negative bias/zero bias for gate drive
- Includes overcurrent protection (DESAT, OCP) along with a function for preventing simultaneous ON of both upper and lower arms
- For evaluating ROHM’s SCT3040KR (1200V/40mΩ/TO-247-4L)
