SCT3080KRHR
1200V, 31A, 4引脚THD, 沟槽结构 车载SiC-MOSFET
SCT3080KRHR
1200V, 31A, 4引脚THD, 沟槽结构 车载SiC-MOSFET
SCT3080KRHR是一款1200V 31A的Nch SiC功率MOSFET。该产品采用沟槽结构实现了更低的导通电阻，是符合AEC-Q101标准的高可靠性车载级产品。
主要规格
特性：
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
80
Generation
3rd Gen (Trench)
Drain Current[A]
31
Total Power Dissipation[W]
165
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x23.45 (t=5.2)
Common Standard
AEC-Q101 (Automotive Grade)
特点：
- Qualified to AEC-Q101
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
