SCT3105KL
N-channel SiC（碳化硅）功率MOSFET
SCT3105KL
SCT3105KL
N-channel SiC（碳化硅）功率MOSFET
沟槽栅极结构的SiC-MOSFET。平面型SiC-MOSFET相比，同一芯片尺寸的导通电阻可降低50%，这将大幅降低太阳能发电用功率调节器和工业设备用电源、工业用逆变器等所有相关设备的功率损耗。
主要规格
特性：
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
105
Generation
3rd Gen (Trench)
Drain Current[A]
24
Total Power Dissipation[W]
134
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
特点：
・ Low on-resistance・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant
