SCT3160KL
N-channel SiC（碳化硅）功率MOSFET
SCT3160KL
SCT3160KL
N-channel SiC（碳化硅）功率MOSFET
SCT3160KL是1200V 17A的Nch SiC功率MOSFET。
主要规格
特性：
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
160
Generation
3rd Gen (Trench)
Drain Current[A]
17
Total Power Dissipation[W]
103
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
特点：
・ Low on-resistance・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant
