BSM080D12P2C008
SiC（碳化硅）功率模块

本品是使用ROHM生产的SiC-DMOSFET和SiC肖特基势垒二极管的斩波结构的SiC MOSFET模块。

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* 本产品是标准级的产品。
本产品不建议使用于车载设备。
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主要规格

 
型号 | BSM080D12P2C008
Status | 推荐品
封装 | C
包装形态 | Corrugated Cardboard
包装数量 | 12
最小独立包装数量 | 12
RoHS | Yes

特性：

Drain-source Voltage[V]

1200

Drain Current[A]

80

Total Power Dissipation[W]

600

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Half bridge

Package Size [mm]

122x45.6 (t=17.5)

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特点：

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Reference Design / Application Evaluation Kit

 
    • Drive Board - BSMGD3C12D24-EVK001

    • This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User's Guide
    • Snubber Module - MGSM1D72J2-145MH26

    • Snubber Module for BSM series (1200V, C type)

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