BSM250D17P2E004
1700V “全SiC”功率模块

BSM250D17P2E004是由罗姆公司生产的SiC-DMOSFET和SiC-SBD构成的“全SiC”半桥模块。在高温高湿偏压试验（HV-H3TRB）中实现了超过1,000小时也不发生绝缘击穿的高可靠性。由此，在高温高湿环境下也可放心耐受1700V高压。适合以室外发电系统和充放电试验机等评估装置为代表的工业设备用电源的变频器、转换器。

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* 本产品是标准级的产品。
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主要规格

 
型号 | BSM250D17P2E004
Status | 推荐品
封装 | E
包装形态 | Corrugated Cardboard
包装数量 | 4
最小独立包装数量 | 4
RoHS | Yes

特性：

Drain-source Voltage[V]

1700

Drain Current[A]

250

Total Power Dissipation[W]

1800

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Half bridge

Package Size [mm]

152x57.95 (t=18)

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特点：

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Reference Design / Application Evaluation Kit

 
    • Drive Board - BSMGD2G17D24-EVK001

    • This evaluation board, BSMGD2G17D24-EVK001, is a gate driver board for full SiC Modules with the 2nd Generation 1700V SiC-MOSFET in E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User's Guide
    • Snubber Module - MGSM1D72J3-934MH93

    • Snubber Module for BSM250 (1700V,E type)

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