SCS230AE2
SiC(碳化硅)肖特基势垒二极管
SCS230AE2
SiC(碳化硅)肖特基势垒二极管
SCS230AE2是可通过低VF进行高速开关的SiC肖特基势垒二极管。 3pin封装
主要规格
特性:
Grade
Standard
Reverse Voltage[V]
650
Continuous Forward Current[A]
30
Generation
2nd Gen
Total Power Dissipation[W]
230
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
21.0x16.0 (t=5.2)
特点:
・反向恢复时间短・能够高速开关
・特性的温度影响小
参考设计 / 应用评估套件
-
- Reference Design - REF67010
- 3.6kW Interleaved Boost PFC
The REF67010-IPFC_3.6kW-EVK-A04 is a Reference Board with Interleaved Boost PFC topology. It demostrates ROHM’s strong power devices portfolio i.e., high speed switching device Field Trench IGBT and SiC SBD diodes in the Boost Stage. The Auxiliary power supply uses PWM type DC/DC converter IC with 800V Integrated MOSFET and Super-Fast Recovery Diode. The converter is rated at 3.6kW.
This reference design consists of the following three boards.- REF67010-IPFC_3.6kW-EVK-A04_PCBA016: Main board
- REF67010-IPFC_3.6kW-EVK-A04_PCBA017: Auxiliary power supply board
- REF67010-IPFC_3.6kW-EVK-A04_PCBA018: Controller board