RGTV00TS65D
短路耐量 2µs, 650V 50A,内置快速反向恢复二极管, TO-247N,沟槽式场截止型 IGBT
RGTV00TS65D
短路耐量 2µs, 650V 50A,内置快速反向恢复二极管, TO-247N,沟槽式场截止型 IGBT
RGTV00TS65D是低VCE(sat)、低开关损耗的IGBT。适合PFC、太阳能变频器、UPS、焊接、IH等用途。
主要规格
特性：
Series
TV: For inverter (tsc 2µs)
VCES [V]
650
IC(100°C)[A]
50
VCE(sat) (Typ.) [V]
1.5
tf(Typ.) [ns]
38
tsc(Min.) [us]
2
Built-in Diode
FRD
Pd [W]
276
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
特点：
- Low Collector - Emitter Saturation Voltage
- High Speed Switching & Low Switching Loss
- Short Circuit Withstand Time 2μs
- Built in Very Fast & Soft Recovery FRD
- Pb - free Lead Plating ; RoHS Compliant
