RGW00TS65DHR
超高速开关型, 650V 50A, 内置FRD, TO-247N, Field Stop Trench IGBT
RGW00TS65DHR
超高速开关型, 650V 50A, 内置FRD, TO-247N, Field Stop Trench IGBT
RGW00TS65DHR是以高速开关为特点的IGBT。适合车载/非车载充电器、DC/DC转换器、PFC、工业用变频电机等应用。是符合AEC-Q101标准的高可靠性产品。
RGTV/RGW系列是消除了IGBT的低导通损耗及高速开关特性两者此消彼长关系的高效系列。并且实现了顺畅的软开关，降低了开关时的电压过冲，有助于大幅降低设计负担。
主要规格
特性：
Series
W: High speed fast SW
VCES [V]
650
IC(100°C)[A]
50
VCE(sat) (Typ.) [V]
1.5
tf(Typ.) [ns]
37
Built-in Diode
FRD
Pd [W]
254
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16.0x25.0 (t=5.2)
Common Standard
AEC-Q101 (Automotive Grade)
特点：
- AEC-Q101 Qualified
- Low Collector - Emitter Saturation Voltage
- Low Switching Loss & Soft Switching
- Built in Very Fast & Soft Recovery FRD
- Pb - free Lead Plating; RoHS Compliant
