BM3G007MUV-LB
Nano Cap™, EcoGaN™, 650V 70mΩ 2MHz, GaN HEMT Power Stage IC
BM3G007MUV-LB
Nano Cap™, EcoGaN™, 650V 70mΩ 2MHz, GaN HEMT Power Stage IC
该产品是保证在工业市场长期供应的产品。BM3G007MUV-LB非常适用于要求高功率密度和高效率的各种电子系统。通过将650V增强型GaN HEMT和Si驱动器集成于ROHM自有封装，与以往的分立解决方案相比，由PCB布线和引线键合引起的寄生电感大大降低，可实现高达150V/ns的开关速度。另外，其栅极驱动强度可调节，这非常有助于降低EMI。该产品还内置各种保护功能和其他附加功能，可优化成本和PCB尺寸。该IC的设计旨在通用于现有的主要控制器，因此也可以替代SJ MOSFET等以往的分立功率开关。
主要规格
特性：
Vin (Min.)[V]
-0.6
Vin (Max.)[V]
30
Operating Current@130 kHz(Typ) [μA]
650
Quiescent Current (Typ) [μA]
180
Switching Frequency(Max)[MHz]
2
Turn-on Delay Time(Typ)[ns]
12
Turn-off Delay Time(Typ)[ns]
15
Temperature (Min.)[°C]
-40
Temperature (Max.)[°C]
105
ON State Resistance(Typ)[mΩ]
70
Package Size [mm]
8.0x8.0 (t=1.0)
Application
Networking, Server
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Min.)[°C]
150
特点：
- Nano Cap™ Integrated Output Selectable 5V LDO
- Long Time Support Product for Industrial Applications
- Wide Operating Range for VDD Pin Voltage
- Wide Operating Range for IN Pin Voltage
- Low VDD Quiescent and Operating Current
- Low Propagation Delay
- High dv/dt Immunity
- Adjustable Gate Drive Strength
- Power Good Signal Output
- VDD UVLO Protection
- Thermal Shutdown Protection
Reference Design / Application Evaluation Kit
-
- Evaluation Board - BM3G007MUV-EVK-003
The BM3G007MUV-EVK-003 evaluation board consists of the BM3G007MUV (GaN FET (650V 70mΩ), integrated driver and protection circuit) and A board on which peripheral components are mounted. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.
-
- Evaluation Board - BM3G007MUV-EVK-002
With GaN HEMT, Power Factor Correction 240W 400V BM3G007MUV Reference Board
