RGE60TS65DG (新产品)
5μs Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-247GE, Field Stop Trench IGBT
RGE60TS65DG (新产品)
5μs Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-247GE, Field Stop Trench IGBT
RGE60TS65DG is IGBT featuring low switching loss and low conduction loss. It is ideal for Power Conditioner and Welder and General Inverter and UPS
本产品不建议使用于车载设备。
主要规格
特性：
Series
E: For inverter (tsc 5µs)
VCES [V]
650
IC(100°C)[A]
30
VCE(sat) (Typ.) [V]
1.65
tf(Typ.) [ns]
78
tsc(Min.) [us]
5
Built-in Diode
FRD
Pd [W]
166
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
20.95x15.94 (t=5.22)
特点：
- Low Collector - Emitter Saturation Voltage
- Low Switching Loss
- Short Circuit Withstand Time 5μs
- Built in Very Fast & Soft Recovery FRD
- Pb - free Lead Plating ; RoHS Compliant
