RGSX5TS65DHR
短路耐受时间8µs, 650V 75A, 内置FRD, 车载用 Field Stop Trench IGBT
RGSX5TS65DHR
短路耐受时间8µs, 650V 75A, 内置FRD, 车载用 Field Stop Trench IGBT
RGSX5TS65DHR是短路耐受时间为8µs、非常适用于车载和工业设备中的通用逆变器的产品。符合AEC-Q101标准。
主要规格
特性：
Series
S: For inverter (tsc 8-10µs)
VCES [V]
650
IC(100°C)[A]
75
VCE(sat) (Typ.) [V]
1.7
tf(Typ.) [ns]
87
tsc(Min.) [us]
8
Built-in Diode
FRD
Pd [W]
404
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16.0x25.0 (t=5.2)
Common Standard
AEC-Q101 (Automotive Grade)
特点：
- Low Collector - Emitter Saturation Voltage
- Short Circuit Withstand Time 8μs
- Qualified to AEC-Q101
- Built in Very Fast & Soft Recovery FRD
- Pb - free Lead Plating ; RoHS Compliant
