RGSX5TS65E
短路耐受时间8μs, 650V 75A, 内置FRD, Field Stop Trench IGBT
RGSX5TS65E
短路耐受时间8μs, 650V 75A, 内置FRD, Field Stop Trench IGBT
RGSX5TS65E是短路耐受时间为8μs、非常适用于通用逆变器、UPS、焊接机和功率调节器等应用的产品。
主要规格
特性：
Series
S: For inverter (tsc 8-10µs)
VCES [V]
650
IC(100°C)[A]
75
VCE(sat) (Typ.) [V]
1.7
tf(Typ.) [ns]
87
tsc(Min.) [us]
8
Built-in Diode
FRD
Pd [W]
404
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
21.0x16.0 (t=5.2)
特点：
- Low Collector - Emitter Saturation Voltage
- Short Circuit Withstand Time 8μs
- Built in Very Fast & Soft Recovery FRD
- Pb - free Lead Plating ; RoHS Compliant
