RGT16NS65D(TO-262)
短路耐量 5µs, 650V 8A,内置快速反向恢复二极管, TO-262, 沟槽式场截止型 IGBT
RGT16NS65D(TO-262)
短路耐量 5µs, 650V 8A,内置快速反向恢复二极管, TO-262, 沟槽式场截止型 IGBT
罗姆的IGBT（绝缘栅极型双极晶体管）产品为高电压、大电流应用的高效化和节能化作贡献。
主要规格
特性：
Series
T: For inverter (tsc 5µs)
VCES [V]
650
IC(100°C)[A]
8
VCE(sat) (Typ.) [V]
1.65
tf(Typ.) [ns]
95
tsc(Min.) [us]
5
Built-in Diode
FRD
Pd [W]
94
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
10.1x9 (t=4.7)
特点：
1) Low Collector - Emitter Saturation Voltage2) Low Switching Loss
3) Short Circuit Withstand Time 5us
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
5) Pb - free Lead Plating ; RoHS Compliant
