RGT20NL65
短路耐量 5µs, 650V 10A, LPDL, 沟槽式场截止型 IGBT
RGT20NL65
RGT20NL65
短路耐量 5µs, 650V 10A, LPDL, 沟槽式场截止型 IGBT
RGT20NL65是一款具有低VCE(sat)和低开关损耗的IGBT。适用于逆变器、UPS、功率调节器、焊接机等应用。
主要规格
特性：
Series
T: For inverter (tsc 5µs)
VCES [V]
650
IC(100°C)[A]
10
VCE(sat) (Typ.) [V]
1.65
tf(Typ.) [ns]
104
tsc(Min.) [us]
5
Pd [W]
106
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
10.1x15.1 (t=4.7)
特点：
- Low Collector - Emitter Saturation Voltage
- Low Switching Loss
- Short Circuit Withstand Time 5μs
- Pb - free Lead Plating ; RoHS Compliant
