RGT20TM65D
短路耐量 5µs, 650V 10A,内置快速反向恢复二极管, TO-220NFM, 沟槽式场截止型 IGBT
RGT20TM65D
短路耐量 5µs, 650V 10A,内置快速反向恢复二极管, TO-220NFM, 沟槽式场截止型 IGBT
RGT20TM65D是一款低VCE(sat)的场截止沟槽型IGBT。适用于逆变器、UPS、功率调节器、焊接等用途。
主要规格
特性：
Series
T: For inverter (tsc 5µs)
VCES [V]
650
IC(100°C)[A]
6
VCE(sat) (Typ.) [V]
1.65
tf(Typ.) [ns]
104
tsc(Min.) [us]
5
Built-in Diode
FRD
Pd [W]
25
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
10x15 (t=4.7)
特点：
- Low Collector - Emitter Saturation Voltage
- Low Switching Loss
- Short Circuit Withstand Time 5μs
- Built in Very Fast & Soft Recovery FRD (RFN - Series)
- Pb - free Lead Plating ; RoHS Compliant
