RGT50NS65D(TO-262)
短路耐量 5µs, 650V 25A,内置快速反向恢复二极管, TO-262, 沟槽式场截止型 IGBT
RGT50NS65D(TO-262)
短路耐量 5µs, 650V 25A,内置快速反向恢复二极管, TO-262, 沟槽式场截止型 IGBT
罗姆的IGBT（绝缘栅极型双极晶体管）产品为广大的高电压、大电流应用的高效化和节能化做出了贡献。
主要规格
特性：
Series
T: For inverter (tsc 5µs)
VCES [V]
650
IC(100°C)[A]
25
VCE(sat) (Typ.) [V]
1.65
tf(Typ.) [ns]
65
tsc(Min.) [us]
5
Built-in Diode
FRD
Pd [W]
194
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
10.1x9 (t=4.7)
特点：
- Low Collector-Emitter Saturation Voltage
- Low Switching Loss
- Short Circuit Withstand Time 5µs
- Built in Very Fast & Soft Recovery FRD (RFN-Series)
- Pb-free Lead Plating; RoHS Compliant
