RGW50TK65D
超高速开关型, 650V 18A, 内置快速反向恢复二极管, TO-3PFM,沟槽式场截止型 IGBT
RGW50TK65D
RGW50TK65D
超高速开关型, 650V 18A, 内置快速反向恢复二极管, TO-3PFM,沟槽式场截止型 IGBT
The datasheet is coming soon.
主要规格
特性：
Series
W: High speed fast SW
VCES [V]
650
IC(100°C)[A]
18
VCE(sat) (Typ.) [V]
1.5
tf(Typ.) [ns]
53
Built-in Diode
FRD
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
特点：
- Low Collector - Emitter Saturation Voltage
- High Speed Switching
- Low Switching Loss & Soft Switching
- Built in Very Fast & Soft Recovery FRD
- Pb - free Lead Plating ; RoHS Compliant
