SH2103WN
650V 80A, IGBT模块用FRD裸芯片
SH2103WN
主要规格
特性：
Series
FRD: Fast recovery diode
VRM [V]
650
IF(Nominal) [A]
80
VF(Typ.) [V]
1.45
Operating Temperature (Min.)[°C]
-40
Operating Temperature (Max.)[°C]
175
特点：
- Light Punch Through Type
- Low Forward Voltage
- Very Fast & Soft Recovery
- Low Recovery Loss
