RLD85NZJ4
850nm波段 红外单模式 激光二极管主要规格
特性：
Application
Motion Sensor for Gesture Control, 3D Depth Sensor
Wave-length λ(Min.)[nm]
842
Wave-length λ(Typ.)[nm]
852
Wave-length λ(Max.)[nm]
862
Optical Output Po(Max.)[mW]
220
LD Reverse Voltage(Max.)[V]
2
PinPD Reverse Voltage(Max.)[V]
20
Optical Output Condition Po(Typ.)[mW]
200
Threshold Current Ith(Typ.)[mA]
40
Threshold Current Ith(Max.)[mA]
60
Operating Current Iop(Typ.)[mA]
250
Operating Current Iop(Max.)[mA]
350
Operating Voltage Vop(Typ.)[V]
2.4
Operating Voltage Vop(Max.)[V]
2.8
Output Efficiency η(Min.)[W/A]
0.7
Output Efficiency η(Typ.)[W/A]
0.95
Output Efficiency η(Max.)[W/A]
1.5
Monitor Current Im(Min.)[mA]
0.1
Monitor Current Im(Typ.)[mA]
0.4
Monitor Current Im(Max.)[mA]
1
Beam Divergence θ//(Min.)[deg]
7
Beam Divergence θ//(Typ.)[deg]
9.5
Beam Divergence θ//(Max.)[deg]
12
Beam Divergence θ⊥(Min.)[deg]
13
Beam Divergence θ⊥(Typ.)[deg]
19
Beam Divergence θ⊥(Max.)[deg]
23
Beam Tolerance ⊿θ//(Min.)[deg]
-3
Beam Tolerance ⊿θ//(Typ.)[deg]
0
Beam Tolerance ⊿θ//(Max.)[deg]
3
Beam Tolerance ⊿θ⊥(Min.)[deg]
-4
Beam Tolerance ⊿θ⊥(Typ.)[deg]
0
Beam Tolerance ⊿θ⊥(Max.)[deg]
4
Emission Point Accuracy ⊿XYZ(Min.)[µm]
-100
Emission Point Accuracy ⊿XYZ(Typ.)[µm]
0
Emission Point Accuracy ⊿XYZ(Max.)[µm]
100
Polarity
N(LD Anode / PD Cathode)
Operating Temperature (Min.)[°C]
-10
Operating Temperature (Max.)[°C]
60
Package Size [mm]
φ5.6
特点：
- 850nm Infrared
- Single Mode
- Industry standard φ5.6 metal stem
