ROHM Product Detail

BR25A512F-3M
105℃工作 SPI BUS EEPROM

BR25A512F-3M是512kbit SPI BUS接口的串行EEPROM。

主要规格

 
型号 | BR25A512F-3MGE2
Status | 推荐品
封装 | SOP8
包装形态 | Taping
包装数量 | 2500
最小独立包装数量 | 2500
RoHS | Yes

功能安全:

类别 : FS supportive
A product that has been developed for automotive use and is capable of supporting safety analysis with regard to the functional safety.

特性:

Series

BR25A-3M

Density [bit]

512K

Bit Format [Word x Bit]

64K x 8

Vcc(Min.)[V]

2.5

Vcc(Max.)[V]

5.5

Circuit Current (Max.)[mA]

4

Standby Current (Max.)[μA]

10

Write Cycle (Max.)[ms]

5

Input Frequency (Max.)[Hz]

10M

Endurance (Max.)[Cycle]

106

Data Retention (Max.)[Year]

100

I/F

SPI BUS

Operating Temperature (Min.)[°C]

-40

Operating Temperature (Max.)[°C]

105

Package Size [mm]

5x6.2 (t=1.71)

Common Standard

AEC-Q100 (Automotive Grade)

Find Similar

特点:

  • High Speed Clock Action up to 10MHz (Max)
  • Wait Function by HOLDB Terminal
  • Part or Whole of Memory Arrays Settable as Read only Memory Area by Program
  • 2.5V to 5.5V Single Power Source Operation Most Suitable for Battery Use
  • Up to 128 Bytes in Page Write Mode
  • For SPI BUS Interface (CPOL, CPHA) = (0, 0), (1, 1)
  • Self-timed Programming Cycle
  • Low Current Consumption
    ·At Write Action (5V) : 0.7mA (Typ)
    ·At Read Action (5V) : 2.4mA (Typ)
    ·At Standby Action (5V) : 0.1µA (Typ)
  • Address Auto Increment Function at Read Action
  • Prevention of Write Mistake
    ·Write Prohibition at Power On
    ·Write Prohibition by Command Code (WRDI)
    ·Write Prohibition by WPB Pin
    ·Write Prohibition Block Setting by Status Registers (BP1, BP0)
    ·Prevention of Write Mistake at Low Voltage
  • More than 100 years Data Retention
  • More than 1 Million Write Cycles
  • Bit Format 64K×8
  • Initial Delivery Data
    Memory Array : FFh
    Status Register: WPEN, BP1, BP0 : 0
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