BR93G56FVT-3A
Microwire BUS 2kbit(128x16bit) EEPROM

罗姆的串行EEPROM备有各种容量、接口和封装类型的产品,在全球市场上拥有较高的占有率。罗姆的串行EEPROM采用世界标准的总线形式(Microwire、I²C、SPI),工作电源电压范围广(1.7~5.5V、1.8~5.5V、2.5~5.5V、3.0~3.6V),适合电池用途。所有产品均为无铅产品,符合RoHS指令。

Data Sheet 购买 *
* 本产品是标准级的产品。
本产品不建议使用于车载设备。

主要规格

 
型号 | BR93G56FVT-3AGE2
Status | 推荐品
封装 | TSSOP-B8
包装形态 | Taping
包装数量 | 3000
最小独立包装数量 | 3000
RoHS | Yes

特性:

Series

BR93G-3A

Density [bit]

2K

Bit Format [Word x Bit]

128 x 16

Comment

Cu wire bonding.

Vcc(Min.)[V]

1.7

Vcc(Max.)[V]

5.5

Circuit Current (Max.)[mA]

3

Standby Current (Max.)[μA]

2

Write Cycle (Max.)[ms]

5

Input Frequency (Max.)[Hz]

3M

Endurance (Max.)[Cycle]

106

Data Retention (Max.)[Year]

40

I/F

MicroWire BUS(3-Wire)

Operating Temperature (Min.)[°C]

-40

Operating Temperature (Max.)[°C]

85

Package Size [mm]

3x6.4 (t=1.2)

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特点:

・ 3-line communications of chip select, serial clock, serial data input / output (the case where input and output are shared)
・ Actions available at high speed 3MHz clock (4.5 V~5.5 V)
・ High speed write available (write time 5ms max.)
・ Same package and pin layout from 1Kbit to 16Kbit
・ 1.7~5.5V single power source action
・ Address auto increment function at read action
・ Write mistake prevention function » Write prohibition at power on » Write prohibition by command code » Write mistake prevention function at low voltage
・ Program cycle auto delete and auto end function
・ Program condition display by READY / BUSY
・ Compact package SOP8/SOP-J8/SSOP-B8/TSSOP-B8/MSOP8/ TSSOP-B8J/DIP-T8/VSON008X2030
・ Data retention for 40 years
・ Data rewrite up to 1,000,000 times
・ Data at shipment all addresses FFFFh
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