ROHM Product Detail

BR25G128FVM-3
SPI BUS EEPROM

BR25G128FVM-3是128kbit SPI BUS接口的串行EEPROM。

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* 本产品是标准级的产品。
本产品不建议使用于车载设备。

主要规格

 
型号 | BR25G128FVM-3GTR
Status | 推荐品
封装 | MSOP8
包装形态 | Taping
包装数量 | 3000
最小独立包装数量 | 3000
RoHS | Yes

特性:

Series

BR25G-3

Density [bit]

128K

Bit Format [Word x Bit]

16K x 8

Vcc(Min.)[V]

1.6

Vcc(Max.)[V]

5.5

Circuit Current (Max.)[mA]

8

Standby Current (Max.)[μA]

2

Write Cycle (Max.)[ms]

5

Input Frequency (Max.)[Hz]

20M

Endurance (Max.)[Cycle]

106

Data Retention (Max.)[Year]

100

I/F

SPI BUS

Operating Temperature (Min.)[°C]

-40

Operating Temperature (Max.)[°C]

85

Package Size [mm]

2.9x4 (t=0.9)

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特点:

  • High Speed Clock Action up to 20MHz(Max)
  • Wait Function by HOLDB TerminalPart or Whole of Memory Arrays Settable asRead only Memory Area by Program1.6V to 5.5V Single Power Source Operation Most Suitable for Battery Use.Up to 64 Bytes in Page Write Mode.For SPI Bus Interface(CPOL, CPHA) =(0, 0),(1, 1)
  • Self-timed Programming CycleLow Current Consumption
  • At Write Action(5V) : 0.5mA(Typ)
  • At Read Action(5V) : 2.0mA(Typ)
  • At Standby Action(5V) : 0.1µA(Typ)
  • Address Auto Increment Function at Read ActionPrevention of Write Mistake
  • Write Prohibition at Power On
  • Write Prohibition by Command Code(WRDI)
  • Write Prohibition by WPB Pin
  • Write Prohibition Block Setting by Status Registers(BP1, BP0)
  • Prevention of Write Mistake at Low VoltageMore than 100 years Data Retention.More than 1 Million Write Cycles.Bit Format 16K×8Initial Delivery Data
  • Memory Array: FFh
  • Status Register: WPEN, BP1, BP0 : 0
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