ROHM Product Detail

BR25H010F-2LB(H2)
125℃工作 SPI BUS 1kbit (128x8bit) EEPROM

本产品是面向工业设备市场的产品,保证可长期稳定供货。 是适合这些用途的产品。
BR25H010F-2LB是SPI BUS接口方式的串行EEPROM。

主要规格

 
型号 | BR25H010F-2LBH2
Status | 推荐品
封装 | SOP8
包装形态 | Taping
包装数量 | 250
最小独立包装数量 | 250
RoHS | Yes

特性:

Series

BR25H-2LB

Density [bit]

1K

Bit Format [Word x Bit]

128 x 8

Vcc(Min.)[V]

2.5

Vcc(Max.)[V]

5.5

Circuit Current (Max.)[mA]

3

Standby Current (Max.)[μA]

10

Write Cycle (Max.)[ms]

4

Input Frequency (Max.)[Hz]

10M

Endurance (Max.)[Cycle]

106

Data Retention (Max.)[Year]

40

I/F

SPI BUS

Operating Temperature (Min.)[°C]

-40

Operating Temperature (Max.)[°C]

125

Package Size [mm]

5x6.2 (t=1.71)

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特点:

· Long time support a product for Industrial applications.
· High speed clock action up to 10MHz (Max.)
· Wait function by HOLDB terminal.
· Part or whole of memory arrays settable as read only
memory area by program.
· 2.5V to 5.5V single power source action most
suitable
for battery use.
· Page write mode useful for initial value write at
factory shipment.
· For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1)
· Self-timed programming cycle.
· Low Supply Current
At write operation (5V) : 1.0mA (Typ.)
At read operation (5V) : 1.0mA (Typ.)
At standby operation (5V) : 0.1µA (Typ.)
· Address auto increment function at read operation
· Prevention of write mistake
Write prohibition at power on.
Write prohibition by command code (WRDI).
Write prohibition by WPB pin.
Write prohibition block setting by status registers
(BP1, BP0).
Prevention of write mistake at low voltage.
· Data at shipment Memory array: FFh, status register
BP1, BP0 : 0
· More than 100 years data retention.
· More than 1 million write cycles.
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