QS5U34
1.8V Drive Nch+SBD MOSFET
QS5U34
1.8V Drive Nch+SBD MOSFET
电界效果晶体管MOSFET。通过融合采用细微流程的低阻值MOSFET与肖特基二极管（SBD）形成了多种产品线来对应多样的市场需求。
主要规格
特性：
Package Code
SOT-25T
Number of terminal
5
Polarity
Nch+Schottky
Drain-Source Voltage VDSS[V]
20
Drain Current ID[A]
1.5
RDS(on)[Ω] VGS=1.8V(Typ)
0.22
RDS(on)[Ω] VGS=2.5V(Typ)
0.17
RDS(on)[Ω] VGS=4.5V(Typ)
0.13
RDS(on)[Ω] VGS=Drive (Typ)
0.22
Total gate charge Qg[nC]
1.8
Power Dissipation (PD)[W]
0.9
Drive Voltage[V]
1.8
Reverse voltage VR (Diode) [V]
20
Forward Current IF (Diode) [A]
0.5
Forward Current Surge Peak IFSM (Diode) [A]
2
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
2.9x2.8 (t=0.95)
