QS8J4
-30V Pch+Pch Small Signal MOSFET
QS8J4
-30V Pch+Pch Small Signal MOSFET
电界效果晶体管MOSFET。复合两颗Pch MOSFET。提供通过采用细微流程的「超低阻值的设备」而在广泛领域得以应用的功率MOSFET,并且结合用途,以多样的小型高功率复合型的产品线对应多种市场需求。
主要规格
特性:
Package Code
TSMT8
Applications
Power Supply
Number of terminal
8
Polarity
Pch+Pch
Drain-Source Voltage VDSS[V]
-30
Drain Current ID[A]
-4
RDS(on)[Ω] VGS=4V(Typ)
0.06
RDS(on)[Ω] VGS=4.5V(Typ)
0.055
RDS(on)[Ω] VGS=10V(Typ)
0.04
RDS(on)[Ω] VGS=Drive (Typ)
0.06
Total gate charge Qg[nC]
8.4
Power Dissipation (PD)[W]
1.5
Drive Voltage[V]
-4
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
3.0x2.8 (t=0.85)