RJ1P10BBH
Nch 100V 170A, TO-263AB, Power MOSFET
RJ1P10BBH
Nch 100V 170A, TO-263AB, Power MOSFET
RJ1P10BBH is a power MOSFET with low on-resistance and high power small mold package, suitable for switching.
主要规格
特性：
Package Code
TO-263AB
Applications
Switching
Number of terminal
3
Polarity
Nch
Drain-Source Voltage VDSS[V]
100
Drain Current ID[A]
170
RDS(on)[Ω] VGS=6V(Typ)
0.0028
RDS(on)[Ω] VGS=10V(Typ)
0.0023
RDS(on)[Ω] VGS=Drive (Typ)
0.0028
Total gate charge Qg[nC]
89
Power Dissipation (PD)[W]
189
Drive Voltage[V]
6
Trr (Typ)[ns]
90
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
10.11x15.1 (t=4.77)
特点：
- Low on - resistance
- High power small mold package (TO263AB)
- Pb-free plating ; RoHS compliant
- 100% UIS tested
