RQ3E120BN
Nch 30V 12A 中功率MOSFET
RQ3E120BN
Nch 30V 12A 中功率MOSFET
大功率封装（HSMT8）的RQ3E120BN具有低导通电阻，适用于开关用途。
主要规格
特性：
Package Code
HSMT8 (3.3x3.3)
Applications
Switching, Motor
Number of terminal
8
Polarity
Nch
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
21
RDS(on)[Ω] VGS=4.5V(Typ)
0.0086
RDS(on)[Ω] VGS=10V(Typ)
0.0066
RDS(on)[Ω] VGS=Drive (Typ)
0.0086
Total gate charge Qg[nC]
14
Power Dissipation (PD)[W]
16
Drive Voltage[V]
4.5
Mounting Style
Surface mount
Bare Die Part Number
Available: K4012
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
3.3x3.3 (t=0.9)
特点：
- Low on - resistance.
- High Power Package (HSMT8).
- Pb-free lead plating; RoHS compliant.
- Halogen Free
