RQ3E180GN
4.5V驱动型 Nch MOSFET
RQ3E180GN
4.5V驱动型 Nch MOSFET
场效应晶体管MOSFET。通过采用微细工艺的“超低导通电阻元件”，为用户提供应用广泛的功率MOSFET。根据用途备有小型、大功率、复合化的丰富产品阵容，可满足多样的市场需求。
主要规格
特性：
Package Code
HSMT8 (3.3x3.3)
Applications
Power Supply
Number of terminal
8
Polarity
Nch
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
39
RDS(on)[Ω] VGS=4.5V(Typ)
0.0043
RDS(on)[Ω] VGS=10V(Typ)
0.0033
RDS(on)[Ω] VGS=Drive (Typ)
0.0043
Total gate charge Qg[nC]
11
Power Dissipation (PD)[W]
20
Drive Voltage[V]
4.5
Mounting Style
Surface mount
Bare Die Part Number
Available: K4511
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
3.3x3.3 (t=0.9)
特点：
・ Low on - resistance.・ High Power Package (HSMT8).
・ Pb-free lead plating ; RoHS compliant
・ Halogen Free
