RS1E200GN
4.5V驱动型 Nch MOSFET
RS1E200GN
4.5V驱动型 Nch MOSFET
场效应晶体管MOSFET。通过采用微细工艺的“超低导通电阻元件”，为用户提供应用广泛的功率MOSFET。根据用途备有小型、大功率、复合化的丰富产品阵容，可满足多样的市场需求。
主要规格
特性：
Package Code
HSOP8S (5x6)
Applications
Power Supply
Number of terminal
8
Polarity
Nch
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
57
RDS(on)[Ω] VGS=4.5V(Typ)
0.0047
RDS(on)[Ω] VGS=10V(Typ)
0.0036
RDS(on)[Ω] VGS=Drive (Typ)
0.0047
Total gate charge Qg[nC]
7.8
Power Dissipation (PD)[W]
25
Drive Voltage[V]
4.5
Mounting Style
Surface mount
Bare Die Part Number
Available: K4509
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
5.0x6.0 (t=1.1)
特点：
- Low on - resistance
- High Power Package (HSOP8)
- Pb-free lead plating; RoHS compliant
- Halogen Free
- 100% Rg and UIS Tested
