RS1E350GN
Nch 30V 80A 功率MOSFET
RS1E350GN
Nch 30V 80A 功率MOSFET
场效应晶体管MOSFET。通过采用微细工艺的“超低导通电阻元件”，为用户提供应用广泛的功率MOSFET。根据用途备有小型、大功率、复合化的丰富产品阵容，可满足多样的市场需求。
主要规格
特性：
Package Code
HSOP8S (5x6)
Applications
Power Supply
Number of terminal
8
Polarity
Nch
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
80
RDS(on)[Ω] VGS=4.5V(Typ)
0.00192
RDS(on)[Ω] VGS=10V(Typ)
0.00148
RDS(on)[Ω] VGS=Drive (Typ)
0.00192
Total gate charge Qg[nC]
32.7
Power Dissipation (PD)[W]
39
Drive Voltage[V]
4.5
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
5.0x6.0 (t=1.1)
特点：
- Low on - resistance
- High Power Package (HSOP8)
- Pb-free lead plating; RoHS compliant
- Halogen Free
- 100% Rg and UIS Tested
