SCT2160KEHR
1200V, 22A, THD, 车载用SiC-MOSFET
SCT2160KEHR
1200V, 22A, THD, 车载用SiC-MOSFET
采用SiC材质的平面型MOSFET，具有高耐压、低导通电阻、高速开关的特点，是符合AEC-Q101标准的高可靠性车载级产品。
主要规格
特性：
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
160
Generation
2nd Gen (Planar)
Drain Current[A]
22
Total Power Dissipation[W]
165
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
Common Standard
AEC-Q101 (Automotive Grade)
特点：
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
- Qualified to AEC-Q101
