SCT2280KE
SiC（碳化硅）MOSFET
SCT2280KE
SCT2280KE
SiC（碳化硅）MOSFET
基于SiC的平面型MOSFET。（SiC-SBD非一体型） 其特征是高耐压、低导通电阻、高速开关。
主要规格
特性：
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
280
Generation
2nd Gen (Planar)
Drain Current[A]
14
Total Power Dissipation[W]
108
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
特点：
・ Low on-resistance・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant
