SCT3022AL
N-channel SiC(碳化硅)功率MOSFET
SCT3022AL
N-channel SiC(碳化硅)功率MOSFET
SCT3022AL是650V 93A的Nch SiC功率MOSFET。
主要规格
特性:
Drain-source Voltage[V]
650
Drain-source On-state Resistance(Typ.)[mΩ]
22
Generation
3rd Gen (Trench)
Drain Current[A]
93
Total Power Dissipation[W]
339
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
特点:
・ Low on-resistance・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant