SCT3120AW7
650V 21A, 7端子SMD, 沟槽结构, SiC-MOSFET
SCT3120AW7
SCT3120AW7
650V 21A, 7端子SMD, 沟槽结构, SiC-MOSFET
SCT3120AW7是650V 21A的Nch SiC功率MOSFET。采用沟槽结构，降低了导通电阻。
主要规格
特性：
Drain-source Voltage[V]
650
Drain-source On-state Resistance(Typ.)[mΩ]
120
Generation
3rd Gen (Trench)
Drain Current[A]
21
Total Power Dissipation[W]
100
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
10.2x15.4 (t=4.7)
特点：
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
