SCT4026DW7
750V, 51A, 7引脚SMD, 沟槽结构, SiC MOSFET
SCT4026DW7
750V, 51A, 7引脚SMD, 沟槽结构, SiC MOSFET
SCT4026DW7是一款750V、51A的Nch SiC功率MOSFET。该产品采用沟槽结构实现了更低的导通电阻，
ROHM的第4代SiC MOSFET
SCT4系列是改善了短路耐受时间并实现了业界超低导通电阻的第4代产品。与以往产品相比，该系列产品的导通电阻降低了约40%，开关损耗降低了约50%。另外，该产品还支持更容易处理的15V栅-源电压，使应用产品的设计更容易。
主要规格
特性：
Drain-source Voltage[V]
750
Drain-source On-state Resistance(Typ.)[mΩ]
26
Generation
4th Gen (Trench)
Drain Current[A]
51
Total Power Dissipation[W]
150
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
175
Package Size [mm]
10.2x15.4 (t=4.7)
特点：
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
