SCT4036KE
1200V, 36mΩ, 3引脚THD, 沟槽结构, SiC MOSFET

SCT4036KE是一款有助于应用产品实现小型化和更低功耗的SiC MOSFET。

ROHM的第4代SiC MOSFET
SCT4系列是改善了短路耐受时间并实现了业界超低导通电阻的第4代产品。与以往产品相比，该系列产品的导通电阻降低了约40%，开关损耗降低了约50%。另外，还支持更容易处理的15V栅-源电压，使应用产品的设计更容易。

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* 本产品是标准级的产品。
本产品不建议使用于车载设备。
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主要规格

 
型号 | SCT4036KEC11
Status | 推荐品
封装 | TO-247N
包装形态 | Tube
包装数量 | 450
最小独立包装数量 | 30
RoHS | Yes
长期供货计划 | 10 Years

特性：

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

36

Generation

4th Gen (Trench)

Drain Current[A]

43

Total Power Dissipation[W]

176

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

175

Package Size [mm]

16x21 (t=5.2)

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特点：

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant

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SCT4036KEHR   Grade| Automotive Status| 推荐品

Reference Design / Application Evaluation Kit

 
    • Evaluation Board - P04SCT4018KE-EVK-001

      • This board is designed with the optimum gate drive circuit for "SCT4018KE", surely TO-247N can also be evaluated
      • Single power supply(+12V operation)
      • Supports double pulse testing up to 150A and switching up to 500kHz
      • Supports various power supply topologies(Buck, Boost, Half-Bridge)
      • Built-in adjustable gate drive isolated power supply(positive and negative)(+12V to +25V, -4.5V to -2V)
      • Active mirror clamp circuit(driver IC built-in type)
      • Gate surge clamp circuit

    • User's Guide
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