ROHM Product Detail

BSM180C12P3C202
SiC（碳化硅）功率模块

BSM180C12P3C202是低浪涌、低开关损耗的SiC功率模块。适合电机驱动、转换器、太阳能发电及风力发电用途。

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* 本产品是标准级的产品。
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主要规格

 
型号 | BSM180C12P3C202
Status | 推荐品
封装 | C
包装形态 | Corrugated Cardboard
包装数量 | 12
最小独立包装数量 | 12
RoHS | Yes

特性：

Drain-source Voltage[V]

1200

Drain Current[A]

180

Total Power Dissipation[W]

880

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Chopper

Package Size [mm]

122x45.6 (t=17.5)

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特点：

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Reference Design / Application Evaluation Kit

 
    • Drive Board - BSMGD3C12D24-EVK001

    • This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User's Guide
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