BSM180D12P3C007
SiC（碳化硅）功率模块
BSM180D12P3C007
SiC（碳化硅）功率模块
使用罗姆公司生产SiC-UMOSFET的半桥构成SiC MOSFET模块。
主要规格
特性：
Drain-source Voltage[V]
1200
Drain Current[A]
180
Total Power Dissipation[W]
880
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
Package Size [mm]
122x45.6 (t=17.5)
特点：
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
Reference Design / Application Evaluation Kit
-
- Drive Board - BSMGD3C12D24-EVK001
This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
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- Snubber Module - MGSM1D72J2-145MH26
Snubber Module for BSM series (1200V, C type)
-
- Drive Board - TAMURA 2DU series
Drive Board for BSM series (1200V, C / E / G type)
