ROHM Product Detail

BSM300C12P3E201
SiC（碳化硅）功率模块

BSM300C12P3E201是低浪涌、低开关损耗的SiC功率模块。适合电机驱动、转换器、太阳能发电及风力发电用途。

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* 本产品是标准级的产品。
本产品不建议使用于车载设备。
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主要规格

 
型号 | BSM300C12P3E201
Status | 推荐品
封装 | E Type
包装形态 | Corrugated Cardboard
包装数量 | 4
最小独立包装数量 | 4
RoHS | Yes

特性：

Drain-source Voltage[V]

1200

Drain Current[A]

300

Total Power Dissipation[W]

1360

Junction Temperature (Max.) [℃]

175

Storage Temperature (Min.) [℃]

-40

Storage Temperature (Max.) [℃]

125

Package

Chopper

Package Size [mm]

152.0x62.0 (t=18.0)

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特点：

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

参考设计 / 应用评估套件

 
    • Drive Board - BSMGD3G12D24-EVK001

    • This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User's Guide
    • Snubber Module - MGSM1D72J2-145MH16

    • Snubber Module for BSM series (1200V, E / G type)

    • Drive Board - TAMURA 2DU series

    • Drive Board for BSM series (1200V, C / E / G type)

    •
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