BSM300D12P4G101
1200V, 291A, 内置半桥沟槽MOS的全SiC功率模块
BSM300D12P4G101
1200V, 291A, 内置半桥沟槽MOS的全SiC功率模块
BSM300D12P4G101是一款由SiC-UMOSFET组成的半桥功率模块。非常适用于电机驱动、逆变器、转换器、光伏发电、风力发电和IH设备等应用。
主要规格
特性：
Drain-source Voltage[V]
1200
Drain Current[A]
291
Total Power Dissipation[W]
925
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
Package Size [mm]
152x62 (t=18)
特点：
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
Reference Design / Application Evaluation Kit
-
- Drive Board - BSMGD3G12D24-EVK001
This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
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- Snubber Module - MGSM1D72J2-145MH16
Snubber Module for BSM series (1200V, E / G type)
