ROHM Product Detail

BSM400D12P2G003
SiC（碳化硅）功率模块

BSM400D12P2G003是由SiC-DMOSFET和SiC-SBD构成的半桥功率模块。适合电机驱动、逆变器、转换器、光发电、风力发电及IH装置等用途。

Data Sheet 购买 *
* 本产品是标准级的产品。
本产品不建议使用于车载设备。
Data Sheet 购买 *

主要规格

 
型号 | BSM400D12P2G003
Status | 推荐品
封装 | G Type
包装形态 | Corrugated Cardboard
包装数量 | 4
最小独立包装数量 | 4
RoHS | Yes

特性：

Drain-source Voltage[V]

1200

Drain Current[A]

397

Total Power Dissipation[W]

2450

Junction Temperature (Max.) [℃]

175

Storage Temperature (Min.) [℃]

-40

Storage Temperature (Max.) [℃]

125

Package

Half bridge

Package Size [mm]

152.0x62.0 (t=18.0)

Find Similar

特点：

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

参考设计 / 应用评估套件

 
    • Drive Board - BSMGD2G12D24-EVK001

    • This evaluation board, BSMGD2G12D24-EVK001, is a gate driver board for full SiC Modules with the 2nd Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module

    • User's Guide
    • Snubber Module - MGSM1D72J2-145MH16

    • Snubber Module for BSM series (1200V, E / G type)

    • Drive Board - TAMURA 2DU series

    • Drive Board for BSM series (1200V, C / E / G type)

    •
X

Most Viewed