BSM600D12P3G001
SiC（碳化硅）功率模块
BSM600D12P3G001
SiC（碳化硅）功率模块
BSM600D12P3G001是由罗姆公司生产的SiC-UMOSFET和SiC-SBD构成的全SiC半桥模块。适合电机驱动、逆变器、转换器、太阳能发电、风力发电及感应加热装置等用途。
主要规格
特性：
Drain-source Voltage[V]
1200
Drain Current[A]
576
Total Power Dissipation[W]
2450
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
Package Size [mm]
152x62 (t=18)
特点：
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
Reference Design / Application Evaluation Kit
-
- Drive Board - BSMGD3G12D24-EVK001
This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
-
- Snubber Module - MGSM1D72J2-145MH16
Snubber Module for BSM series (1200V, E / G type)
-
- Drive Board - TAMURA 2DU series
Drive Board for BSM series (1200V, C / E / G type)
