BSM600D12P4G103
1200V, 567A, 内置半桥沟槽MOS的全SiC功率模块
BSM600D12P4G103
1200V, 567A, 内置半桥沟槽MOS的全SiC功率模块
BSM600D12P4G103是一款由SiC-DMOSFET组成的半桥功率模块。非常适用于电机驱动、逆变器、转换器、光伏发电、风力发电和IH设备等应用。
主要规格
特性：
Drain-source Voltage[V]
1200
Drain Current[A]
567
Total Power Dissipation[W]
1780
Junction Temperature (Max.) [℃]
175
Storage Temperature (Min.) [℃]
-40
Storage Temperature (Max.) [℃]
125
Package
Half bridge
Package Size [mm]
152.0x62.0 (t=18.0)
特点：
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
参考设计 / 应用评估套件
-
- Drive Board - BSMGD3G12D24-EVK001
This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
-
- Snubber Module - MGSM1D72J2-145MH16
Snubber Module for BSM series (1200V, E / G type)
