S6508 (新产品)
650V, 20A, Silicon-carbide (SiC) SBD Bare Die
S6508
S6508 (新产品)
650V, 20A, Silicon-carbide (SiC) SBD Bare Die
S6508 is an SiC (Silicon Carbide) epitaxial planar type Schottky Barrier Diode. Reducing switching loss, enabling high-speed switching operation.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
Data Sheet
* 本产品是标准级的产品。
本产品不建议使用于车载设备。
本产品不建议使用于车载设备。
主要规格
特性：
Reverse Voltage[V]
650
Continuous Forward Current[A]
20
Generation
3rd Gen
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
特点：
- Low forward voltage
- Negligible recovery time/current
- Temperature independent switching behavior
- High surge current capability
